Title :
Ultra-Thin Gate Oxide (1.6 nm): New Mechanisms of Plasma Induced Damage and Oxidation Process Optimisation
Author :
Carrère, J.P. ; Bidaud, M. ; Guyader, F. ; Haond, M.
Author_Institution :
Centre Commun CNET-STMicroelectronics, Crolles, France
fDate :
11-13 September 2000
Keywords :
Degradation; Etching; Leakage current; MOS devices; Oxidation; Plasma applications; Plasma devices; Testing; Tunneling; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194832
