Ultra-Thin Gate Oxide (1.6 nm): New Mechanisms of Plasma Induced Damage and Oxidation Process Optimisation

Author

Carrère, J.P. ; Bidaud, M. ; Guyader, F. ; Haond, M.

Author_Institution

Centre Commun CNET-STMicroelectronics, Crolles, France

fYear

2000

fDate

11-13 September 2000

Firstpage

532

Lastpage

535

Keywords

Degradation; Etching; Leakage current; MOS devices; Oxidation; Plasma applications; Plasma devices; Testing; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194832

Filename

1503762

Link To Document