DocumentCode :
1919950
Title :
(110)-Oriented GaAs/AlGaAs multiple quantum well microposts for high-speed polarization switching of spin-controlled VCSELs
Author :
Yokota, Nobuhide ; Ikeda, Ken-ichi ; Kawaguchi, Hitoshi
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
fYear :
2013
fDate :
12-16 May 2013
Firstpage :
1
Lastpage :
1
Abstract :
In this work, we measured carrier lifetime (τc) and electron spin relaxation time (τs) in (110) GaAs/AlGaAs MQW microposts with special attention to those smaller than 2 μm using a pump probe-based time-resolved Kerr rotation (TRKR) technique. We also report the results of rate equation analysis in a micropost VCSEL using the measured τc and τs.
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; electron spin polarisation; gallium arsenide; laser cavity resonators; optical Kerr effect; optical rotation; optical switches; semiconductor quantum wells; surface emitting lasers; (110)-oriented GaAs/AlGaAs multiple quantum well microposts; GaAs-AlGaAs; carrier lifetime; electron spin relaxation time; high-speed polarization switching; pump probe-based time-resolved Kerr rotation technique; rate equation analysis; spin-controlled VCSEL;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2013.6801110
Filename :
6801110
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1919950
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