Title :
Investigation of single and double gate SOI MOSFETs in Accumulation Mode for enhanced performances and reduced technological drawbacks
Author :
Rauly, E. ; Iniguez, B. ; Flandre, D. ; Raynaud, C.
Author_Institution :
Universite Catholique de Louvain, Louvain-la-Neuve, Belgium
fDate :
11-13 September 2000
Keywords :
CMOS process; CMOS technology; Doping; Laboratories; MOSFETs; Microelectronics; Semiconductor films; Thin film devices; Threshold voltage; Transconductance;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194834
