• DocumentCode
    1919960
  • Title

    Diagnostics of Microwave Low-Barrier Detector Diodes

  • Author

    Shashkin, V.I. ; Murel, A.V.

  • Author_Institution
    Inst. for Phys. of Microstructures RAS GSP-105, Nizhny Novgorod
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    587
  • Lastpage
    588
  • Abstract
    The technique based on analysis of differential contact resistance/voltage dependence was developed in order to characterize low-barrier Mott diodes. The main parameters of low-barrier Mott diodes with sub-surface delta-doping have been determined.
  • Keywords
    microwave detectors; microwave diodes; differential contact resistance-voltage dependence; low-barrier Mott diodes; microwave low-barrier detector diodes; sub-surface delta-doping; Detectors; Electron devices; Gallium arsenide; Schottky diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368862
  • Filename
    4368862
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1919960