Title :
Diagnostics of Microwave Low-Barrier Detector Diodes
Author :
Shashkin, V.I. ; Murel, A.V.
Author_Institution :
Inst. for Phys. of Microstructures RAS GSP-105, Nizhny Novgorod
Abstract :
The technique based on analysis of differential contact resistance/voltage dependence was developed in order to characterize low-barrier Mott diodes. The main parameters of low-barrier Mott diodes with sub-surface delta-doping have been determined.
Keywords :
microwave detectors; microwave diodes; differential contact resistance-voltage dependence; low-barrier Mott diodes; microwave low-barrier detector diodes; sub-surface delta-doping; Detectors; Electron devices; Gallium arsenide; Schottky diodes; Voltage;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368862
