Title :
A Comparative Study of Surface and Buried P-Channel 0.10um MOSFETs
Author :
Guegan, G. ; Deleonibus, S. ; Bertrand, G. ; Souil, D. ; Clerc, R. ; Tedesco, S. ; Heitzmann, M. ; Mur, P.
Author_Institution :
LPCS/ENSERG, Grenoble, France
fDate :
11-13 September 2000
Keywords :
Boron; Doping; Geometry; Ion implantation; Leakage current; Lithography; MOSFETs; Oxidation; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194835
