DocumentCode
1919984
Title
High performance 0.1 um pMOSFETs with optimized poly-Si and poly-SiGe gates
Author
Josse, E. ; Skotnicki, T. ; Jurczak, M. ; Martin, F. ; Paoli, M. ; Tormen, B. ; Hernandez, C. ; Campidelli, Y.
Author_Institution
France Telecom, Meylan, France
fYear
2000
fDate
11-13 September 2000
Firstpage
548
Lastpage
551
Keywords
Boron; Capacitance; Etching; Grain boundaries; Inorganic materials; MOSFETs; Research and development; Silicon; Telecommunications; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194836
Filename
1503766
Link To Document