DocumentCode :
1919984
Title :
High performance 0.1 um pMOSFETs with optimized poly-Si and poly-SiGe gates
Author :
Josse, E. ; Skotnicki, T. ; Jurczak, M. ; Martin, F. ; Paoli, M. ; Tormen, B. ; Hernandez, C. ; Campidelli, Y.
Author_Institution :
France Telecom, Meylan, France
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
548
Lastpage :
551
Keywords :
Boron; Capacitance; Etching; Grain boundaries; Inorganic materials; MOSFETs; Research and development; Silicon; Telecommunications; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194836
Filename :
1503766
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1919984
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