Title :
P1–3: Optimization of structure parameters of gated nanowire field emitters for field emission display application
Author :
Liu, Liyuan ; Chen, Jun ; Deng, Shaozhi ; Xu, Ningsheng
Author_Institution :
Guangdong Province Key Lab. of Display Mater. &, Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
The optimal parameters of gated nanowire field emitters for field emission display application were studied. The device parameters such as geometric parameters of the nanowire, distance between gate electrode and cathode, the cathode to anode distance were simulated. It is found the nanowire height has an optimal value due to the combined effects of geometric field enhancement and gate induced electric field.
Keywords :
anodes; cathodes; electrodes; field emission displays; nanowires; anode distance; cathode; field emission display; gate electrode; gate induced electric field; gated nanowire field emitters; geometric field enhancement; structure parameter optimisation; Anodes; Cathodes; Electric fields; Logic gates; Nanoscale devices; Radiation detectors; field emission display; nanowire emitter; simulation;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563169
