Title :
Spatial Quantization Accounting in Single-Electron Device Simulation
Author :
Abramov, I.I. ; Baranoff, A.L.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk
Abstract :
Physical model of single-electron transistor taking into account spatial quantization effect is described.
Keywords :
semiconductor device models; single electron transistors; physical model; single-electron device simulation; single-electron transistor; spatial quantization effect; Aluminum oxide; Electronic mail; Equations; Gold; Informatics; Microwave devices; Quantization; Single electron devices; Single electron transistors; Tunneling;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368864
