• DocumentCode
    1920001
  • Title

    Spatial Quantization Accounting in Single-Electron Device Simulation

  • Author

    Abramov, I.I. ; Baranoff, A.L.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    591
  • Lastpage
    592
  • Abstract
    Physical model of single-electron transistor taking into account spatial quantization effect is described.
  • Keywords
    semiconductor device models; single electron transistors; physical model; single-electron device simulation; single-electron transistor; spatial quantization effect; Aluminum oxide; Electronic mail; Equations; Gold; Informatics; Microwave devices; Quantization; Single electron devices; Single electron transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368864
  • Filename
    4368864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920001