Investigation of the Effectiveness of a Buried Carbon Layer to Suppress Transient Diffusion Effects in SiGe HBTs

Author

Jouan, S. ; Baudry, H. ; Dutartre, D. ; Fellous, C. ; Laurens, M. ; Lenoble, D. ; Marty, M. ; Monroy, A. ; Perrotin, A. ; Ribot, P. ; Vincent, G. ; Chantre, Alain

Author_Institution

France Telecom, Meylan, France

fYear

2000

fDate

11-13 September 2000

Firstpage

556

Lastpage

559

Keywords

Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194838

Filename

1503768

Link To Document