1920050

Investigation of the Effectiveness of a Buried Carbon Layer to Suppress Transient Diffusion Effects in SiGe HBTs

Jouan, S. ; Baudry, H. ; Dutartre, D. ; Fellous, C. ; Laurens, M. ; Lenoble, D. ; Marty, M. ; Monroy, A. ; Perrotin, A. ; Ribot, P. ; Vincent, G. ; Chantre, Alain

France Telecom, Meylan, France

2000

11-13 September 2000

556

559

Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium;

English

ieee

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

2-86332-248-6

conf

10.1109/ESSDERC.2000.194838

1503768