Title :
The Potential of Strain: Piezoelectric Semiconductor Devices
Author_Institution :
Department of Electronic and Electrical Engineering, Sheffield University, Mappin Street, Sheffield, S1 4DU, UK.
Abstract :
Strong axial, piezoelectric fields are present in III-v quantum wells grown pseudomorphically strained on ≪111≫ axes. Their associated effects can be exploited to improve the performance of a number of optoelectronic devices.
Keywords :
Capacitive sensors; Dielectric constant; III-V semiconductor materials; Optical bistability; Optoelectronic devices; Physics; Piezoelectric devices; Piezoelectric polarization; Semiconductor devices; Tensile stress;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
