Title :
Emitter Scaling of Single-Polysilicon SiGe:C HBTs with Highly Doped Base Layers
Author :
Knoll, D. ; Heinemann, B. ; Ehwald, K.E. ; Fischer, G.G.
Author_Institution :
IHP, Frankfurt (Oder), Germany
fDate :
11-13 September 2000
Keywords :
BiCMOS integrated circuits; CMOS process; CMOS technology; Current measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Radio frequency; Silicon germanium; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194839
