• DocumentCode
    1920070
  • Title

    Emitter Scaling of Single-Polysilicon SiGe:C HBTs with Highly Doped Base Layers

  • Author

    Knoll, D. ; Heinemann, B. ; Ehwald, K.E. ; Fischer, G.G.

  • Author_Institution
    IHP, Frankfurt (Oder), Germany
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    560
  • Lastpage
    563
  • Keywords
    BiCMOS integrated circuits; CMOS process; CMOS technology; Current measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Radio frequency; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194839
  • Filename
    1503769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920070