P1–24: Photo-assisted electron emission from MOS-type cathode based on nanocrystalline silicon

Author

Shimawaki, Hidetaka ; Neo, Yoichiro ; Mimura, Hidenori ; Wakaya, Fujio ; Takai, Mikio

Author_Institution

Grad. Sch. of Eng., Hachinohe Inst. of Technol., Hachinohe, Japan

fYear

2010

fDate

26-30 July 2010

Firstpage

74

Lastpage

75

Abstract

Enhancement of electron emission by illumination of a metal-oxide-semiconductor (MOS)-type cathode based on nanocrystalline silicon has been studied using a He-Ne laser. Heavily doped p-type silicon was used as a substrate and the laser was irradiated on the gate with oblique incidence. The emission current was enhanced under illumination and quickly responded to on-off of the laser. In addition, the threshold voltage for the electron emission decreased.

Keywords

MIS devices; cathodes; gas lasers; helium; neon; photoemission; semiconductor diodes; He-Ne; He-Ne laser; MOS-type cathode; Si; metal-oxide-semiconductor-type cathode; nanocrystalline silicon; photo-assisted electron emission enhancement; threshold voltage; Cathodes; Electron emission; Lighting; Logic gates; Semiconductor diodes; Semiconductor lasers; Silicon; MOS cathode; nanocrystalline silicon; photo-assisted electron emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International

Conference_Location

Palo Alto, CA

Print_ISBN

978-1-4244-7889-7

Electronic_ISBN

978-1-4244-7888-0

Type

conf

DOI

10.1109/IVNC.2010.5563172

Filename

5563172