P1–22: Growing of a single nanodimensional emitting protrusion on a surface of a tungsten carbide field emitter

The procedure of the growing of a single nanoprotrusion on a tungsten carbide field emitter surface was described. This aim is achieved by simultaneous action high electric fields and enough high temperatures on the emitters (thermofield treatment) at special regime. The values of emission current, current density, emission angle and reduced brightness of the single nanoprotrusions-emitters are comparable with the values typical for the emitters from carbon nanotubes.