Title :
Impact on Low-Frequency Noise Properties from Lateral Design of Differentially Grown SiGe HBTs
Author :
Sandén, M. ; Malm, B.G. ; Grahn, J.V. ; Östling, M.
Author_Institution :
Royal Institute of Technology, Kista, Sweden
fDate :
11-13 September 2000
Keywords :
Boron; Chemical vapor deposition; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Phase noise; Silicon germanium; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194840
