DocumentCode :
1920123
Title :
Peculiarities of Intersubband Transision Between Split Levels in Symmetrical Triple-Barrier Structures
Author :
Pashkovskii, A.B.
Author_Institution :
Fed. State Unitary Corp. R&PC lstok, Fryazino
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
603
Lastpage :
604
Abstract :
For symmetric three-barrier resonance tunnel structures with thin high barriers resonant transitions between the split-levels in a weak non-uniform high-frequency field are investigated. It is shown, that in spite of transitions between usual levels both in two, and in three-barrier structures, the probability of transitions between the split levels depends essentially not only on parity of perturbation but also on its form. The investigated effect brings up a question on the top limit of high-frequency conductivity in such systems.
Keywords :
resonant tunnelling devices; high-frequency conductivity; intersubband transition; split-levels; symmetric three-barrier resonance tunnel; symmetrical triple-barrier structures; Costs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
Type :
conf
DOI :
10.1109/CRMICO.2007.4368869
Filename :
4368869
Link To Document :
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