• DocumentCode
    1920145
  • Title

    Analysis of the Emitter Charge Storage in SiGe Heterojunction Bipolar Transistors with a Lightly Doped Emitter

  • Author

    van den Oever, L.C.M. ; Nanver, L.K. ; Slotboom, J.W.

  • Author_Institution
    Delft University of Technology, The Netherlands
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    568
  • Lastpage
    571
  • Keywords
    Capacitance; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Silicon germanium; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194841
  • Filename
    1503771
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920145