Title :
200GHz SiGe Hetero Bipolar Transistor Design
Author :
Eberhardt, J. ; Kasper, E.
Author_Institution :
Universit¨at Stuttgart, Germany
fDate :
11-13 September 2000
Keywords :
Bipolar transistors; Delay; Design optimization; Equations; Frequency; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Physics; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194842
