• DocumentCode
    1920165
  • Title

    200GHz SiGe Hetero Bipolar Transistor Design

  • Author

    Eberhardt, J. ; Kasper, E.

  • Author_Institution
    Universit¨at Stuttgart, Germany
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    572
  • Lastpage
    575
  • Keywords
    Bipolar transistors; Delay; Design optimization; Equations; Frequency; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Physics; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194842
  • Filename
    1503772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920165