DocumentCode :
1920214
Title :
High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double delta-doped Channels Heterostructures
Author :
Kao, M.J. ; Hsu, W.-C. ; Liu, W.C. ; Shieh, H.M.
Author_Institution :
Department of Electrical Engineering National Cheng Kung University 1 University Road, Tainan, Taiwan, R.O.C
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
559
Lastpage :
562
Abstract :
Double quantum well with ¿doped lattice-strain GaAs/InGaAs/GaAs pseudomorphic heterostructures have been fabricated for the first time. Very high carrier density of more than 1×1013cm¿2 along with enhanced mobility of 2100 cm2/vs at 300K are achieved. Influence of barrier thickness on the carrier densities and mobilities are also investigated.
Keywords :
Charge carrier density; Doping; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Quasi-doping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435780
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1920214
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