Title :
Polysilicon TFT for Active-Matrix Applications: Electrical Performance Improvement by using a Lightly in-situ Doped Drain
Author :
Pichon, L. ; Raoult, F. ; Bonnaud, O. ; Briand, D.
Author_Institution :
Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, C.C.M.O, Campus de Beaulieu, 35042 RENNES Cedex, FRANCE.
Abstract :
Low temperature polysilicon thin film transistors suitable with active-matrix applications are elaborated. Electrical performances can be significantly improved by using a lightly in-situ doped drain. OFF state current can be reduced more than a decade for low drain voltage (Ids ¿ 10 pA for Vds ≪ 1 V) in comparison with a heavily in-situ doped drain. Consequently, ON/OFF state current ratio is much higher (4×106 against 3×105) and besides, field effect mobility increases from 35 to 41 cm2/Vs.
Keywords :
Active matrix liquid crystal displays; Active matrix technology; Amorphous materials; Annealing; Doping; Etching; Intrusion detection; Leakage current; Low voltage; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
