• DocumentCode
    1920266
  • Title

    Polysilicon TFT for Active-Matrix Applications: Electrical Performance Improvement by using a Lightly in-situ Doped Drain

  • Author

    Pichon, L. ; Raoult, F. ; Bonnaud, O. ; Briand, D.

  • Author_Institution
    Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, C.C.M.O, Campus de Beaulieu, 35042 RENNES Cedex, FRANCE.
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    573
  • Lastpage
    576
  • Abstract
    Low temperature polysilicon thin film transistors suitable with active-matrix applications are elaborated. Electrical performances can be significantly improved by using a lightly in-situ doped drain. OFF state current can be reduced more than a decade for low drain voltage (Ids ¿ 10 pA for Vds ≪ 1 V) in comparison with a heavily in-situ doped drain. Consequently, ON/OFF state current ratio is much higher (4×106 against 3×105) and besides, field effect mobility increases from 35 to 41 cm2/Vs.
  • Keywords
    Active matrix liquid crystal displays; Active matrix technology; Amorphous materials; Annealing; Doping; Etching; Intrusion detection; Leakage current; Low voltage; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920266