Title :
MEMS single-pole double-throw (SPDT) X and K-band switching circuits
Author :
Pacheco, S.P. ; Peroulis, D. ; Katehi, L.P.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Single-pole double-throw (SPDT) X and K-band circuit designs incorporating low-loss microelectromechanical shunt capacitive switches are reported. The switches incorporate highly inductive connecting beams which aid in further increasing the isolation at the desired operational RF frequency. Measurements show an isolation of better than 40 dB at both 7 and 20 GHz. Insertion loss was measured at -0.95 dB at 7 GHz and -0.69 dB at 20 GHz for the two respective designs.
Keywords :
micromechanical devices; microwave switches; -0.69 dB; -0.95 dB; 20 GHz; 7 GHz; K-band; MEMS single-pole double-throw switching circuit; RF isolation; X-band; inductive connecting beam; insertion loss; microelectromechanical shunt capacitive switch; Connectors; Frequency; Geometry; Joining processes; K-band; Micromechanical devices; Resonance; Solid state circuits; Switches; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966897
