DocumentCode
1920287
Title
MEMS single-pole double-throw (SPDT) X and K-band switching circuits
Author
Pacheco, S.P. ; Peroulis, D. ; Katehi, L.P.B.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
1
fYear
2001
fDate
20-24 May 2001
Firstpage
321
Abstract
Single-pole double-throw (SPDT) X and K-band circuit designs incorporating low-loss microelectromechanical shunt capacitive switches are reported. The switches incorporate highly inductive connecting beams which aid in further increasing the isolation at the desired operational RF frequency. Measurements show an isolation of better than 40 dB at both 7 and 20 GHz. Insertion loss was measured at -0.95 dB at 7 GHz and -0.69 dB at 20 GHz for the two respective designs.
Keywords
micromechanical devices; microwave switches; -0.69 dB; -0.95 dB; 20 GHz; 7 GHz; K-band; MEMS single-pole double-throw switching circuit; RF isolation; X-band; inductive connecting beam; insertion loss; microelectromechanical shunt capacitive switch; Connectors; Frequency; Geometry; Joining processes; K-band; Micromechanical devices; Resonance; Solid state circuits; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966897
Filename
966897
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