DocumentCode
1920357
Title
Measurement of the Diffusion Length in Silicon Wafers with Improved Spatial Resolution
Author
Faifer, V. ; Dyukov, V. ; Pravdivtsev, A. ; Skurida, D.
Author_Institution
ITAR Ltd., ul. Sredn. Pervomayskaya, 19, Moscow, 105077, Russia, Tel/Fax: (095) 4654101.
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
601
Lastpage
604
Abstract
A novel approach for measurement of the minority carrier diffusion length based on 2D non-stationary surface photovoltage theory is developed. It is shown that the spatial resolution is limited by the most value of light beam diameter and diffusion length. It does not depend on the size of a capacitively coupled electrode. A wafer-scale and rapid mapping with high definition (less than 2 min for 7800 point map) is demonstrated.
Keywords
Condition monitoring; Electrodes; Frequency; Instruments; Integral equations; Length measurement; Optical modulation; Pollution measurement; Silicon; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435789
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