DocumentCode :
1920397
Title :
A new method using charge pumping measurements to determine the electrical channel length variation during aging of 0.5μm CMOS transistors
Author :
Dorval, D. ; Dars, P. ; Merckel, G. ; Bonnaud, O.
Author_Institution :
France Telecom CNET -38243 Meylan cedex; G.M.V URA 1648 -Université Rennes 1
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
605
Lastpage :
608
Abstract :
In this work, we present a new method to determine the Dito constant, which is involved in a mobility reduction law. From different types of static aging measurements, the channel length variation is calculated, using the correct value of Dito. It is thus demonstrated that negative charge trapping tends to reduce the channel length whereas positive charge trapping increases this length.
Keywords :
Aging; Charge carrier processes; Charge measurement; Charge pumps; Current measurement; Degradation; Electric variables measurement; Length measurement; MOSFETs; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435790
Link To Document :
بازگشت