DocumentCode
1920405
Title
P1–12: Miniature electron optics for use in a sub-micron, piezoelectric scanned, multi-electron beam lithography system
Author
Gorski, Richard M. ; Rozansky, Boris
Author_Institution
eBeam Devices, LLC, Arlington Heights, IL, USA
fYear
2010
fDate
26-30 July 2010
Firstpage
52
Lastpage
53
Abstract
A miniaturized electron beam focusing column has been tested for use in a novel arrayed multi-electron beam lithography system using piezoelectric scan. This concept utilizes a piezoelectrically scanned target under an array of non-deflected electron beams gated on and off by computer control synchronized to the pattern to be written. Void of deflection elements the design of the electron column can be simplified so that small arrays of high energy columns operating up to 25keV can be formed. A probe radius of 90nm was measured on a single beam prototype device using a low brightness tungsten cathode. Using a high brightness Schottky TFE cathode the column has a theoretical potential to reach the 10nm regime. This paper presents the electron optical design, optimization scheme and PMMA exposure tests on silicon.
Keywords
Schottky diodes; electron beam focusing; electron beam lithography; piezoelectric devices; Schottky TFE cathodes; computer control; miniature electron optics; multielectron beam lithography system; nondeflected electron beams; piezoelectric scan; single beam prototype device; size 90 nm; Arrays; Electron beams; Lithography; Optical design; Probes; Semiconductor device measurement; Silicon; Lithography; ML2; electron beam; electron beam lithography; maskless; multibeam; piezoelectric;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location
Palo Alto, CA
Print_ISBN
978-1-4244-7889-7
Electronic_ISBN
978-1-4244-7888-0
Type
conf
DOI
10.1109/IVNC.2010.5563187
Filename
5563187
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