DocumentCode :
1920413
Title :
Stable-cw-operation of a Mqw Laser Emitting at 1.54 /spl mu/m on a Si Substrate at Room Temperature
Author :
Sugo, M. ; Mori, H. ; Itoh, Y. ; Sakai, Y. ; Tachikawa, M.
Author_Institution :
NTT Opto-electronics Laboratories, Japan
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Degradation; Epitaxial growth; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Laser stability; Quantum well devices; Residual stresses; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664670
Filename :
664670
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1920413
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