DocumentCode
1920504
Title
Radiation Effects in Microwave Semiconductor Devices
Author
Gromov, D.V.
Author_Institution
Specialized Electron. Syst., Moscow
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
655
Lastpage
656
Abstract
The basic radiation effects in microwave semiconductor devices are presented in this paper. A comparative analysis of radiation hardness is carried out for the microwave transistors and diodes.
Keywords
microwave diodes; microwave transistors; radiation hardening (electronics); microwave diodes; microwave semiconductor devices; microwave transistors; radiation hardness; Gallium arsenide; Microwave devices; Microwave transistors; P-i-n diodes; PIN photodiodes; Radiation effects; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location
Crimea
Print_ISBN
978-966-335-012-7
Type
conf
DOI
10.1109/CRMICO.2007.4368889
Filename
4368889
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