• DocumentCode
    1920527
  • Title

    Radiation Effects in Heterostructures on Gallium Arsenide

  • Author

    Gromov, D.V. ; Polevich, S.A. ; Elesin, V.V.

  • Author_Institution
    Specialized Electron. Syst., Moscow
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    657
  • Lastpage
    658
  • Abstract
    The radiation effects in GaAs Pseudomorphic High Electron Mobility Transistors (pHEMT) and Resonant Tunneling Diodes (RTD) have been experimentally investigated.
  • Keywords
    III-V semiconductors; gallium arsenide; power HEMT; resonant tunnelling diodes; GaAs; RTD; gallium arsenide; heterostructures; pHEMT; pseudomorphic high electron mobility transistors; radiation effects; resonant tunneling diodes; Degradation; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; PHEMTs; Physics; Radiation effects; Road transportation; Transient response;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368890
  • Filename
    4368890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920527