DocumentCode
1920543
Title
Effects of Powerful Pulsed Microwave Electromagnetic Influence in Low Noise Amplifiers
Author
Gromov, D.V. ; Polevich, S.A.
Author_Institution
Specialized Electron. Syst., Moscow
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
659
Lastpage
660
Abstract
The degradation effects of powerful pulsed MW (single tone) and ultra wideband (UWB) electromagnetic influences in several types of low noise amplifiers (LNA) were experimentally investigated.
Keywords
Schottky gate field effect transistors; bipolar transistors; electromagnetic pulse; low noise amplifiers; radiation hardening (electronics); LNA; MESFET; bipolar transistor; degradation effects; low noise amplifiers; pulsed microwave electromagnetic effects; ultra wideband effects; Broadband amplifiers; Degradation; EMP radiation effects; Electromagnetic interference; Gallium arsenide; High power amplifiers; Low-noise amplifiers; Microwave amplifiers; Pulse amplifiers; Road transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location
Crimea
Print_ISBN
978-966-335-012-7
Type
conf
DOI
10.1109/CRMICO.2007.4368891
Filename
4368891
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