• DocumentCode
    1920554
  • Title

    Transient Radiation Effects in Silicon Carbide Transistors

  • Author

    Gromov, D.V. ; Polevich, S.A. ; Lebedev, A.A.

  • Author_Institution
    Specialized Electron. Syst., Moscow
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    661
  • Lastpage
    662
  • Abstract
    Transient radiation effects in SiC JFET´s are investigated using a pulse X-ray accelerator and a pulse laser simulator.
  • Keywords
    junction gate field effect transistors; radiation effects; semiconductor lasers; silicon compounds; SiC; SiC JFET; junction gate field effect transistor; pulse X-ray accelerator; pulse laser simulator; silicon carbide transistor; transient radiation effects; Gallium arsenide; Radiation effects; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368892
  • Filename
    4368892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920554