Title :
Transient Radiation Effects in Silicon Carbide Transistors
Author :
Gromov, D.V. ; Polevich, S.A. ; Lebedev, A.A.
Author_Institution :
Specialized Electron. Syst., Moscow
Abstract :
Transient radiation effects in SiC JFET´s are investigated using a pulse X-ray accelerator and a pulse laser simulator.
Keywords :
junction gate field effect transistors; radiation effects; semiconductor lasers; silicon compounds; SiC; SiC JFET; junction gate field effect transistor; pulse X-ray accelerator; pulse laser simulator; silicon carbide transistor; transient radiation effects; Gallium arsenide; Radiation effects; Silicon carbide;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368892
