Title :
Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films
Author :
Teowee, G. ; Boulton, J.M. ; Kneer, E.A. ; Orr, M.N. ; Birnie, D.P. ; Uhlmann, D.R. ; Lee, S.C. ; Galloway, K.F. ; Schrimpf, R.D.
Author_Institution :
Arizona Univ., Tucson, AZ, USA
fDate :
30 Aug-2 Sep 1992
Abstract :
A series of sol-gel-derived PZT (lead zirconate titanate) films with Zr:Ti ratios of 100:0, 94:6, 80:20, 65:35, 53:47, 35:65, 20:80, and 0:100 was prepared on platinized Si wafers. The precursor chemistries were based on lead acetate and Zr/Ti alkoxides containing the appropriate amounts of cations in the required stoichiometries. Excess PbO was incorporated to compensate for PbO loss during processing. Films were fired to 700°C where they were all single-phase perovskite as determined by XRD (X-ray diffraction). Microlithography was performed to obtain Pt-PZT-Pt monolithic capacitors with 130-μm by 130-μm electrode pads. The ferroelectric properties on these pads were measured along with the leakage characteristics. The dielectric and ferroelectric properties of the PZT films were found to be highly dependent on composition and processing conditions
Keywords :
annealing; current density; dielectric polarisation; electronic conduction in insulating thin films; ferroelectric thin films; lead compounds; platinum; sol-gel processing; thin film capacitors; 100 C; 130 micron; 400 C; 700 C; Pt-PZT-Pt monolithic capacitor; Pt-PbZrO3TiO3-Pt; Si wafer; X-ray diffraction; XRD; Zr/Ti stoichiometry ratio; annealing; current density; dielectric constant; dielectric properties; electrode pads; ferroelectric properties; leakage characteristics; microlithography; precursor chemistries; remanent polarisation; resistivity; single-phase perovskite; sol-gel processing; Capacitors; Chemistry; Ferroelectric films; Ferroelectric materials; Lead; Semiconductor films; Titanium compounds; X-ray diffraction; X-ray scattering; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300601
