9.3: Sub-bandgap photoemission correlated with adsorbed molecules and bulk impurities in diamond

Author

Shaw, J.L. ; Feigelson, B.N. ; Babich, Yu.V. ; Hanna, J.M. ; Pate, B.B. ; Yater, Y.E.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2010

fDate

26-30 July 2010

Firstpage

191

Lastpage

192

Abstract

We report on photoemission images from NEA diamond using sub-bandgap and near-bandgap photon energies. Emission can be stimulated with photon wavelengths as low as 365 nm, but the low-energy emission disappears after heating the diamond to 700°C, while emission stimulated with 254 and 224 nm photons remains. In both cases the emission occurs only where the concentration of bulk point defects is low. We explain this behavior as the result of photon absorption both in the bulk and at the surface competing with bulk recombination.

Keywords

adsorbed layers; diamond; electron affinity; impurities; photoemission; point defects; C; NEA diamond; adsorbed molecules; bulk impurity; bulk point defect concentration; low-energy emission; near-bandgap photon energy; negative electron affinity; photon absorption; sub-bandgap photon energy; subbandgap photoemission images; temperature 700 degC; wavelength 224 nm; wavelength 254 nm; Diamond-like carbon; Heating; Impurities; Nitrogen; Photoelectricity; Photonics; Surface treatment; HPHT; NEA; PEEM; diamond; electron emission; photoemission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International

Conference_Location

Palo Alto, CA

Print_ISBN

978-1-4244-7889-7

Electronic_ISBN

978-1-4244-7888-0

Type

conf

DOI

10.1109/IVNC.2010.5563193

Filename

5563193