Title :
8.5: Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices
Author :
Jin, Xiuguang ; Maeda, Yuya ; Sasaki, Toshio ; Arai, Shigeo ; Fuchi, Shingo ; Ujihara, Toru ; Takeda, Yoshikazu
Author_Institution :
Dept. of Crystalline Mater. Sci., Nagoya Univ., Nagoya, Japan
Abstract :
The spin-polarization of electrons from the GaAs/GaAsP superlattice on GaAs is higher than that from the same superlattice on GaP. TEM observation revealed that in the superlattice on GaAs stacking faults were the main defects but in the superlattice on GaP local thickness modulation of superlattice layers was prominent. Stacking faults and thickness modulation have different effects on the spin-polarization.
Keywords :
III-V semiconductors; electron spin polarisation; gallium arsenide; photocathodes; superlattices; transmission electron microscopy; GaAs; TEM observation; local thickness modulation; photocathodes; spin-polarization; strained superlattices; Buffer layers; Cathodes; Gallium arsenide; Modulation; Stacking; Substrates; Superlattices; Photocathode; Spin-polarization; Superlattice; Thickness modulation;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563194
