DocumentCode :
1920695
Title :
Simple spice based modeling platform for 4.5 kV power IGBT modules
Author :
Nawaz, Muhammad ; Chimento, Filippo ; Mora, Nicolas ; Zannoni, M.
Author_Institution :
ABB Corp. Res., Vasteras, Sweden
fYear :
2013
fDate :
15-19 Sept. 2013
Firstpage :
279
Lastpage :
286
Abstract :
The paper deals with the development of a PSpice based modeling platform for the evaluation of 4.5 kV and 2.0 kA power IGBT modules to be used in HVDC and FACTS applications. Using PSpice, a set of device parameters (both for IGBTs and diodes) have first been extracted and verified by static and dynamic comparison of experimental data from 4.5 kV and 2.0 kA Si based power modules. Implemented device models along with complete gate driver circuitry unit in PSpice show fair agreement with experimental dynamic results and present realistic prediction of losses under various operating conditions (i.e., voltage and current ratings, stray inductances, gate resistances, temperature, variations in gate currents and gate voltages etc). The modeling platform, thus, supports not only the performance prediction of converter cell design but also possibly avoids the usage of extensive laboratory testing.
Keywords :
SPICE; insulated gate bipolar transistors; power semiconductor devices; FACTS; HVDC; PSpice based modeling platform; converter cell design; gate driver circuitry unit; power IGBT modules; voltage 4.5 kV; Analytical models; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Mathematical model; Multichip modules; SPICE; IGBTs; Modeling; PSpice; Power Module;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/ECCE.2013.6646712
Filename :
6646712
Link To Document :
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