Simple spice based modeling platform for 4.5 kV power IGBT modules

Author

Nawaz, Muhammad ; Chimento, Filippo ; Mora, Nicolas ; Zannoni, M.

Author_Institution

ABB Corp. Res., Vasteras, Sweden

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

279

Lastpage

286

Abstract

The paper deals with the development of a PSpice based modeling platform for the evaluation of 4.5 kV and 2.0 kA power IGBT modules to be used in HVDC and FACTS applications. Using PSpice, a set of device parameters (both for IGBTs and diodes) have first been extracted and verified by static and dynamic comparison of experimental data from 4.5 kV and 2.0 kA Si based power modules. Implemented device models along with complete gate driver circuitry unit in PSpice show fair agreement with experimental dynamic results and present realistic prediction of losses under various operating conditions (i.e., voltage and current ratings, stray inductances, gate resistances, temperature, variations in gate currents and gate voltages etc). The modeling platform, thus, supports not only the performance prediction of converter cell design but also possibly avoids the usage of extensive laboratory testing.

Keywords

SPICE; insulated gate bipolar transistors; power semiconductor devices; FACTS; HVDC; PSpice based modeling platform; converter cell design; gate driver circuitry unit; power IGBT modules; voltage 4.5 kV; Analytical models; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Mathematical model; Multichip modules; SPICE; IGBTs; Modeling; PSpice; Power Module;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6646712

Filename

6646712