DocumentCode :
1920752
Title :
LDMOS electro-thermal model validation from large-signal time-domain measurements
Author :
Gaddi, R. ; Pla, J.A. ; Benedikt, J. ; Tasker, P.J.
Author_Institution :
Sch. of Eng., Cardiff Univ., UK
Volume :
1
fYear :
2001
fDate :
20-24 May 2001
Firstpage :
399
Abstract :
Analytical nonlinear model validation through large-signal time-domain characterization has been greatly improved, by establishing a novel link between measurement and simulation. Investigation on a silicon LDMOS device and its nonlinear electro-thermal model positively identifies links between model formulation and amplifier requirements for future telecommunication systems.
Keywords :
MOSFET; circuit CAD; power amplifiers; radiofrequency amplifiers; semiconductor device models; time-domain analysis; CAD; LDMOS electro-thermal model; RF power amplifier; amplifier requirements; large-signal time-domain measurements; model formulation; model validation; nonlinear model; telecommunication systems; Analytical models; Current measurement; Design automation; Power amplifiers; Power system modeling; Pulse amplifiers; Radiofrequency amplifiers; Radiofrequency identification; Silicon; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-6538-0
Type :
conf
DOI :
10.1109/MWSYM.2001.966915
Filename :
966915
Link To Document :
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