Title :
7.5: Massive parallel Electron Beam lithography based on a planar type Si nanowire array ballistic electron source with large surface
Author :
Kojima, Kira ; Ohta, Toshiyuki ; Ohyi, Hideyuki ; Koshida, Nobuyoshi
Author_Institution :
Crestec Corp., Tokyo, Japan
Abstract :
The parallel Electron Beam (EB) lithography based on a Surface Electron Emission Lithography system (SEL) for high resolution and high throughput is demonstrated in this study. The exposure results indicated that the submicron mask patterns on a planar type silicon nanowire array ballistic electron emitter (PBE) were well reproduced in large area. The capability of ballistic electron emission from the PBE allows us to exposure fine pattern in large region.
Keywords :
electron beam lithography; electron emission; elemental semiconductors; field emitter arrays; nanowires; silicon; Si; massive parallel electron beam lithography; planar type silicon nanowire array ballistic electron emitter; submicron mask patterns; surface electron emission lithography system; Arrays; Electron emission; Electron optics; Lithography; Phonons; Prototypes; Silicon;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563201
