• DocumentCode
    1920784
  • Title

    7.5: Massive parallel Electron Beam lithography based on a planar type Si nanowire array ballistic electron source with large surface

  • Author

    Kojima, Kira ; Ohta, Toshiyuki ; Ohyi, Hideyuki ; Koshida, Nobuyoshi

  • Author_Institution
    Crestec Corp., Tokyo, Japan
  • fYear
    2010
  • fDate
    26-30 July 2010
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    The parallel Electron Beam (EB) lithography based on a Surface Electron Emission Lithography system (SEL) for high resolution and high throughput is demonstrated in this study. The exposure results indicated that the submicron mask patterns on a planar type silicon nanowire array ballistic electron emitter (PBE) were well reproduced in large area. The capability of ballistic electron emission from the PBE allows us to exposure fine pattern in large region.
  • Keywords
    electron beam lithography; electron emission; elemental semiconductors; field emitter arrays; nanowires; silicon; Si; massive parallel electron beam lithography; planar type silicon nanowire array ballistic electron emitter; submicron mask patterns; surface electron emission lithography system; Arrays; Electron emission; Electron optics; Lithography; Phonons; Prototypes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
  • Conference_Location
    Palo Alto, CA
  • Print_ISBN
    978-1-4244-7889-7
  • Electronic_ISBN
    978-1-4244-7888-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2010.5563201
  • Filename
    5563201
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920784