Temperature-dependent modeling of high power MESFET using thermal FDTD method

Author

Wojtasiak, W. ; Gryglewski, D.

Author_Institution

Inst. of Radioelectron., Warsaw Univ. of Technol., Poland

Volume

1

fYear

2001

fDate

20-24 May 2001

Firstpage

411

Abstract

A temperature-dependent model of high power MESFET based on the small signal extraction methodology is presented. The temperature dependencies of the MESFET equivalent circuit elements derived from experimental results describing long-term thermal effects and short-term thermal effects have been modeled by means of FDTD method using chip dimensions. The verification of the proposed model shows an excellent agreement of the experimental results with the theoretical analysis.

Keywords

equivalent circuits; finite difference time-domain analysis; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; chip dimensions; equivalent circuit elements; high power MESFET; long-term thermal effects; short-term thermal effects; small signal extraction methodology; temperature-dependent modeling; thermal FDTD method; Equivalent circuits; Finite difference methods; Gallium arsenide; High power amplifiers; MESFET circuits; Power amplifiers; Power generation; Temperature dependence; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966918

Filename

966918