Title :
A Stress Concentration MOSFET Structure
Author :
Xiangzhan Wang ; Qingping Zeng ; Bin Liu ; Cheng Gan ; Qian Luo ; Qi Yu ; Yang Liu ; Kaizhou Tan ; Xianwei Ying
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A MOSFET using a stress concentration (SC) structure to enhance the channel stress in strained MOSFETs is proposed. The nMOSFETs with gate length varying from 15 to 350 nm are simulated to investigate the effects of SC. For devices strained by tensile contact etching stop layer, over 12% driving current improvement better than that of conventional strained devices has been achieved. The method for introducing SC is effective for both short-and long-channel device.
Keywords :
MOSFET; etching; internal stresses; CESL; MOSFET; channel stress; size 15 nm to 350 nm; stress concentration structure; tensile contact etching stop layer; Deformable models; Educational institutions; Logic gates; MOSFET; Semiconductor process modeling; Silicon; Stress; Contact etching stop layer (CESL); nanoscale MOSFET; strained Si; stress concentration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2292545
