Title :
6.3: Study on micro-fabrication processes of triode device structures using vertically aligned n-type doped amorphous Si nanowires arrays
Author :
Zhou, B.P. ; She, J.C. ; Deng, S.Z. ; Chen, Jun ; Xu, N.S.
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
Studies on micro-fabrication processes on integrating amorphous Si nanowires (a-SiNWs) arrays into a triode device structures were performed. Self-aligned technique was employed. Uniform a-SiNW array and gated a-SiNW triode device structure were obtained. The work provides a possibility for fabricating crosslink addressable arrays of a-SiNW triode devices on low cost and large area glass substrates.
Keywords :
nanofabrication; nanowires; silicon; triodes; Si; amorphous silicon nanowires arrays; crosslink addressable arrays; glass substrates; microfabrication process; self-aligned technique; triode device structure; Cathodes; Chromium; Logic gates; Nanowires; Scanning electron microscopy; Silicon; anisotropic etching; field emission; self-aligned technique;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563207
