• DocumentCode
    1920963
  • Title

    Optimum number of cascaded cells for high-power medium-voltage multilevel converters

  • Author

    Huber, Jonas E. ; Kolar, Johann Walter

  • Author_Institution
    Power Electron. Syst. Lab., ETH Zurich, Zurich, Switzerland
  • fYear
    2013
  • fDate
    15-19 Sept. 2013
  • Firstpage
    359
  • Lastpage
    366
  • Abstract
    When power electronic systems are connected to the medium-voltage grid, often multilevel topologies consisting of a number of cascaded converter cells are considered. For a given grid voltage level, either few cells featuring semiconductors with high blocking voltage capability or many cells using low-voltage semiconductors can be employed. This paper proposes efficiency/power density (η-ρ) Pareto analysis to comprehensively identify the optimum number of cascaded cells. Recent advances in silicon carbide (SiC) semiconductor technology point towards devices with blocking voltages exceeding 15kV. The switching characteristics that hypothetical SiC devices would have to provide in order to realize a simple single-stage full-bridge converter competitive to a multilevel solution are derived and found to be impracticably fast. Furthermore, it is shown that reliability concerns arising with increasing number of cascaded cells can be mitigated by means of redundancy.
  • Keywords
    Pareto analysis; power convertors; power grids; silicon compounds; wide band gap semiconductors; SiC; cascaded converter cells; efficiency-power density Pareto analysis; grid voltage level; high blocking voltage capability; high-power medium-voltage multilevel converters; low-voltage semiconductors; medium-voltage grid; multilevel topology; power electronic systems; silicon carbide semiconductor technology; single-stage full-bridge converter; switching characteristics; Density measurement; Power system measurements; Reliability; Silicon; Silicon carbide; Switches; Switching loss;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/ECCE.2013.6646723
  • Filename
    6646723