DocumentCode
1920977
Title
Inversion Layer Quantization Impact on the Interpretation of 1/f Noise in Deep Submicron CMOS Transistors
Author
Mercha, A. ; Simoen, E. ; Richardson, G. ; Claeys, C.
Author_Institution
IMEC, Leuven, Belgium
fYear
2002
fDate
24-26 September 2002
Firstpage
79
Lastpage
82
Keywords
CMOS technology; Doping; Low-frequency noise; MOSFETs; Noise level; Photonic band gap; Quantization; Semiconductor device modeling; Semiconductor process modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194875
Filename
1503805
Link To Document