Title :
Inversion Layer Quantization Impact on the Interpretation of 1/f Noise in Deep Submicron CMOS Transistors
Author :
Mercha, A. ; Simoen, E. ; Richardson, G. ; Claeys, C.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
24-26 September 2002
Keywords :
CMOS technology; Doping; Low-frequency noise; MOSFETs; Noise level; Photonic band gap; Quantization; Semiconductor device modeling; Semiconductor process modeling; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194875
