Title :
Thermal transients in microwave active devices and their influence on intermodulation distortion
Author :
David, S. ; Batty, W. ; Panks, A.J. ; Johnson, R.G. ; Snowden, C.M.
Author_Institution :
Sch. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
A fully physical transient thermal model is used to investigate the effects of temperature on the intermodulation distortion performance of microwave devices. A 24 mm, 60 finger PHEMT is used to compare measurements with predictions from the model. Results are in very good agreement and are a strong indication of thermally induced intermodulation distortion.
Keywords :
high electron mobility transistors; intermodulation distortion; microwave devices; microwave transistors; semiconductor device models; transient analysis; IMD performance; PHEMT; intermodulation distortion; microwave active devices; physical transient thermal model; pseudomorphic HEMT; temperature effects; thermal transients; thermally induced IMD; Electromagnetic heating; Equations; Impedance; Intermodulation distortion; MMICs; Microwave devices; Power dissipation; Solid modeling; Temperature dependence; Thermal conductivity;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966923
