Title :
Channel Engineering Study for 50 nm P-Channel MOSFET
Author :
Guegan, G. ; Souil, D. ; Deleonibus, S. ; Tedesco, S. ; Laviron, C. ; Previtali, B. ; Nier, M.E.
Author_Institution :
CEA/LETI, Grenoble, France
fDate :
24-26 September 2002
Keywords :
Annealing; Boron; Cost function; Doping profiles; Implants; Ion implantation; Length measurement; Lithography; MOSFET circuits; Microelectronics;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194884
