DocumentCode :
1921235
Title :
SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10um x 10um Pillars
Author :
Straube, U.N. ; Waite, A.M. ; Lloyd, N. ; Croucher, S.G. ; Tang, Y.T. ; Evans, A.G.R. ; Grasby, T.J. ; Whall, T.E. ; Parker, E. C H ; Norris, D. ; Cullis, T.
Author_Institution :
University of Southampton, United Kingdom
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
123
Lastpage :
126
Keywords :
Buffer layers; Computer science; Dry etching; Fabrication; Germanium silicon alloys; Implants; MOSFETs; Physics; Silicon germanium; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194885
Filename :
1503815
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1921235
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