DocumentCode
1921280
Title
65 nm Transistors for a 90 nm CMOS SOC Platform
Author
Mirabedini, M.R. ; Gopinath, V.P. ; Kamath, A. ; Lee, M.Y. ; Yeh, W.C.
Author_Institution
LSI Logic Corporation, Santa Clara, USA
fYear
2002
fDate
24-26 September 2002
Firstpage
131
Lastpage
134
Keywords
Boron; CMOS logic circuits; CMOS process; CMOS technology; Dielectric devices; Implants; Leakage current; Nickel; Silicides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194887
Filename
1503817
Link To Document