Title :
Influence of Source-drain Tunneling on the Subthreshold Behavior of sub-10nm Double-gate MOSFETs
Author_Institution :
Infineon Technologies, Munich, Germany
fDate :
24-26 September 2002
Keywords :
MOSFETs; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194888
