DocumentCode :
1921323
Title :
Si/SiGe Modulation Doped Structures by Gas Source Molecular Beam Epitaxy using Arsenic as a Donor
Author :
Matsumura, A. ; Prasad, R.S. ; Thornton, T.J. ; Fernández, J.M. ; Xie, M.H. ; Zhang, X. ; Zhang, J. ; Joyce, B.A.
Author_Institution :
Electrical Engineering Department, Imperial College, London SW7, UK; Interdisciplinary Research Centre for Semiconductor Materials, Imperial College, London SW7, UK; Nippon Steel Corp., 5-10-1 Fuchinobe, Sagamihara-shi, Kanagawa 229, Japan
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
741
Lastpage :
744
Abstract :
We have grown Si/SiGe modulation doped quantum wells by gas source molecular beam epitaxy using, for the first time, arsenic as an n-type dopant. The layers are characterised by magnetotransport measurements and SIMS analysis. The latter shows an arsenic concentration in excess of 1019 cm¿3 along with strong surface segregation.
Keywords :
Buffer layers; Electrical resistance measurement; Electron mobility; Epitaxial layers; Germanium silicon alloys; Magnetic field measurement; Molecular beam epitaxial growth; Silicon germanium; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435821
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1921323
بازگشت