Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation

Author

Lipovetzky, J. ; Redin, E. ; Inza, M. Garcia ; Carbonetto, S. ; Faigon, A.

Author_Institution

Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina

fYear

2009

fDate

1-2 Oct. 2009

Firstpage

41

Lastpage

45

Abstract

The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of temperatures and gate voltages: a shift in V_T caused by a change in the built in potential, thermal annealing which occurs even during irradiation, and a third contribution probably associated with changes of transport or capture parameters with temperature.

Keywords

MOSFET; annealing; dosimeters; gamma-ray effects; nanoelectronics; gamma-irradiation response; gate oxide thickness MOS dosimeters; metal oxide semiconductor dosimeters; radiation induced charge neutralization; switched bias irradiation; temperature effects; thermal annealing; threshold voltage evolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro-Nanoelectronics, Technology and Applications, 2009. EAMTA 2009. Argentine School of

Conference_Location

San Carlos de Bariloche

Print_ISBN

978-1-4244-4835-7

Electronic_ISBN

978-9-8725-1029-9

Type

conf

Filename

5288902