DocumentCode :
1921330
Title :
Understanding nMOSFET Characteristics after Soft Breakdown and Their Dependence on the Breakdown Location
Author :
Kaczer, B. ; Degraeve, R. ; Crupi, F. ; Keersgieter, A. De ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
139
Lastpage :
142
Keywords :
Electric breakdown; Electrons; Equations; FETs; Immune system; Insulation; MOSFET circuits; Medical simulation; Medical tests; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194889
Filename :
1503819
Link To Document :
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