DocumentCode
1921350
Title
Impact of parasitic elements on the spurious triggering pulse in synchronous buck converter
Author
Jianjing Wang ; Chung, Henry Shu-Hung
Author_Institution
Center for Smart Energy Conversion & Utilization Res., City Univ. of Hong Kong, Hong Kong, China
fYear
2013
fDate
15-19 Sept. 2013
Firstpage
480
Lastpage
487
Abstract
Limiting the spurious triggering pulse in the gate-source voltage of the lower MOSFET during the turn-on transition of the upper MOSFET is mandatory to prevent substantial switching loss and even shoot-through in the synchronous buck converter. This paper conducts an exhaustive investigation into the impact of the inherent parasitic elements on the spurious triggering pulse to facilitate a reliability-oriented design. An analytical model that considers the parasitic capacitances and inductances, reverse recovery characteristics of the body diode and the interaction between the upper and the lower MOSFETs is established to quantify this pulse. The spurious triggering pulse is found to stem from the induced increase in the gate voltage and the induced decrease in the source voltage. Variation in the magnitude of the spurious triggering pulse in regard to each parasitic element is identified accordingly. Experimental results of a practical synchronous buck converter affirm the theoretical analysis.
Keywords
power MOSFET; power convertors; semiconductor device reliability; MOSFET; analytical model; body diode reverse recovery characteristics; gate-source voltage; parasitic capacitances; parasitic element impact; parasitic inductances; reliability-oriented design; shoot-through; spurious triggering pulse; switching loss; synchronous buck converter; turn-on transition; Capacitance; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Switches; Threshold voltage; MOSFET; parasitic elements; spurious turn-on; synchronous buck converter;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2013 IEEE
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/ECCE.2013.6646740
Filename
6646740
Link To Document