DocumentCode
1921372
Title
Single-Wafer, SiGe Heterostructures Grown by Cold Wall UHV-CVD: Application to Hetero-Junction Bipolar Transistor (HBT) Fabrication
Author
Glowacki, F. ; Campidelli, Y. ; Garchery, L. ; Gruhle, A.
Author_Institution
France Telecom, CNET-CNS, BP 98, 38243, Meylan-Cedex, France.
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
745
Lastpage
748
Abstract
HBT layers have been fabricated using a multi-step process in a single run. They were made in a new, single-wafer, 200 mm compatible, cold wall UHV-CVD reactor [1]. Preliminary electrical measurements on fabricated transistors demonstrate excellent control of layers thickness and doping transitions which allows to compare these HBT layers with those fabricated by MBE [2] or hot-wall UHV-CVD [3].
Keywords
Bipolar transistors; Doping; Electric variables measurement; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Silicon germanium; Thickness control; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435823
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