• DocumentCode
    1921399
  • Title

    Selective Epitaxial Growth of Si1-xGex for Device Applications and Nanostructures

  • Author

    Vescan, L. ; Loo, R. ; Dieker, C. ; Wickenhäuser, S. ; Hartmann, A. ; Apetz, R.

  • Author_Institution
    Institut fÿr Schicht-und Ionentechnik, Forschungszentrum Jÿlich GmbH, D-52425 Jÿlich Germany
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    749
  • Lastpage
    752
  • Abstract
    In this article several features of the selective epitaxial growth of SiGe by LPCVD are discussed, such as the pad size dependence of growth rate, composition and strain relaxation. Finally, intense photoluminescence from sub¿m dots with SiGe/Si multiple quantum wells is presented.
  • Keywords
    Capacitive sensors; Epitaxial growth; Etching; Germanium silicon alloys; Holographic optical components; Hydrogen; Kinetic theory; Nanostructures; Silicon germanium; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435824
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921399